Simulation of transport in laterally gated junctionless transistors fabricated by local anodization with an atomic force microscope
نویسندگان
چکیده
منابع مشابه
Metal-Gated Junctionless Nanowire Transistors
Junctionless Nanowire Field-Effect Transistors (JNFETs), where the channel region is uniformly doped without the need for source-channel and drain-channel junctions or lateral doping abruptness, are considered an attractive alternative to conventional CMOS FETs. Previous theoretical and experimental works [1][2] on JNFETs have considered polysilicon gates and silicon-dioxide dielectric. However...
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ژورنال
عنوان ژورنال: physica status solidi (a)
سال: 2013
ISSN: 1862-6300
DOI: 10.1002/pssa.201228775